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FDS86106
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-SOIC (0.154, 3.90mm Width)
- MOSFET N-CH 100V 3.4A 8-SOIC
Date Sheet
在庫數 100
- 1+: $1.67362
- 10+: $1.57888
- 100+: $1.48951
- 500+: $1.40520
- 1000+: $1.32566
小計金額 $1.67362
仕様 よくある質問
- Factory Lead Time:9 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154, 3.90mm Width)
- Number of Pins:8
- Weight:130mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:3.4A Ta
- Drive Voltage (Max Rds On, Min Rds On):6V 10V
- Number of Elements:1
- Power Dissipation (Max):5W Ta
- Turn Off Delay Time:8 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2008
- JESD-609 Code:e4
- Pbfree Code:yes
- Part Status:ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:8
- ECCN Code:EAR99
- Terminal Finish:Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Qualification Status:Not Qualified
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:5W
- Turn On Delay Time:5 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:105m Ω @ 3.4A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:208pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs:4nC @ 10V
- Rise Time:10ns
- Vgs (Max):±20V
- Fall Time (Typ):10 ns
- Continuous Drain Current (ID):3.4A
- Threshold Voltage:2.9V
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:100V
- Nominal Vgs:2.9 V
- Feedback Cap-Max (Crss):3 pF
- Height:1.5mm
- Length:4mm
- Width:5mm
- REACH SVHC:No SVHC
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 100
- 1+: $1.67362
- 10+: $1.57888
- 100+: $1.48951
- 500+: $1.40520
- 1000+: $1.32566
小計金額 $1.67362
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