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FDS86106

在庫數 100

  • 1+: $1.67362
  • 10+: $1.57888
  • 100+: $1.48951
  • 500+: $1.40520
  • 1000+: $1.32566

小計金額 $1.67362

仕様 よくある質問
  • Factory Lead Time:9 Weeks
  • Mount:Surface Mount
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154, 3.90mm Width)
  • Number of Pins:8
  • Weight:130mg
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:3.4A Ta
  • Drive Voltage (Max Rds On, Min Rds On):6V 10V
  • Number of Elements:1
  • Power Dissipation (Max):5W Ta
  • Turn Off Delay Time:8 ns
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
  • Operating Temperature:-55°C~150°C TJ
  • Packaging:Tape & Reel (TR)
  • Series:PowerTrench®
  • Published:2008
  • JESD-609 Code:e4
  • Pbfree Code:yes
  • Part Status:ACTIVE (Last Updated: 2 days ago)
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:8
  • ECCN Code:EAR99
  • Terminal Finish:Nickel/Palladium/Gold (Ni/Pd/Au)
  • Terminal Position:DUAL
  • Terminal Form:GULL WING
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
  • Qualification Status:Not Qualified
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:5W
  • Turn On Delay Time:5 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:105m Ω @ 3.4A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:208pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs:4nC @ 10V
  • Rise Time:10ns
  • Vgs (Max):±20V
  • Fall Time (Typ):10 ns
  • Continuous Drain Current (ID):3.4A
  • Threshold Voltage:2.9V
  • Gate to Source Voltage (Vgs):20V
  • Drain to Source Breakdown Voltage:100V
  • Nominal Vgs:2.9 V
  • Feedback Cap-Max (Crss):3 pF
  • Height:1.5mm
  • Length:4mm
  • Width:5mm
  • REACH SVHC:No SVHC
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 100

  • 1+: $1.67362
  • 10+: $1.57888
  • 100+: $1.48951
  • 500+: $1.40520
  • 1000+: $1.32566

小計金額 $1.67362

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