FQPF13N06L

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3 Full Pack
MOSFET N-CH 60V 10A TO-220F
Date Sheet

在庫數 26000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：4 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Number of Pins：3
Weight：2.27g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：10A Tc
Drive Voltage (Max Rds On, Min Rds On)：5V 10V
Number of Elements：1
Power Dissipation (Max)：24W Tc
Turn Off Delay Time：20 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.5V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tube
Series：QFET®
Published：2001
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 3 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：110MOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：60V
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：13.6A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：24W
Case Connection：ISOLATED
Turn On Delay Time：8 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：110m Ω @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：6.4nC @ 5V
Rise Time：90ns
Vgs (Max)：±20V
Fall Time (Typ)：40 ns
Continuous Drain Current (ID)：10A
Threshold Voltage：2.5V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：60V
Pulsed Drain Current-Max (IDM)：40A
Avalanche Energy Rating (Eas)：90 mJ
Height：9.19mm
Length：10.16mm
Width：4.7mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 26000

小計金額 $0.00000

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