FDB045AN08A0

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 75V 90A D2PAK
Date Sheet

在庫數 433

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
Factory Lead Time：11 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：19A Ta 90A Tc
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：310W Tc
Turn Off Delay Time：40 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2001
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：4.5MOhm
Voltage - Rated DC：75V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Current Rating：19A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：310W
Case Connection：DRAIN
Turn On Delay Time：18 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：6600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：138nC @ 10V
Rise Time：88ns
Vgs (Max)：±20V
Fall Time (Typ)：45 ns
Continuous Drain Current (ID)：80A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：75V
Avalanche Energy Rating (Eas)：600 mJ
Height：4.83mm
Length：10.67mm
Width：11.33mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 433

小計金額 $0.00000

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