FQP4N90C

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3
Trans MOSFET N-CH 900V 4A 3-Pin(3 Tab) TO-220 Tube
Date Sheet

在庫數 26000

1+： $2.10482
10+： $1.98568
100+： $1.87328
500+： $1.76725
1000+： $1.66722

小計金額 $2.10482

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
Factory Lead Time：8 Weeks
Contact Plating：Tin
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3
Number of Pins：3
Weight：1.8g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：4A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：140W Tc
Turn Off Delay Time：40 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：QFET®
Published：2013
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Voltage - Rated DC：900V
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：4A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：140W
Turn On Delay Time：25 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4.2 Ω @ 2A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：960pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
Rise Time：50ns
Vgs (Max)：±30V
Fall Time (Typ)：35 ns
Continuous Drain Current (ID)：4A
Threshold Voltage：5V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：4A
Drain to Source Breakdown Voltage：900V
Avalanche Energy Rating (Eas)：570 mJ
Height：9.2mm
Length：9.9mm
Width：4.5mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 26000

1+： $2.10482
10+： $1.98568
100+： $1.87328
500+： $1.76725
1000+： $1.66722

小計金額 $2.10482

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FQP4N90C