FQPF11N50CF

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3 Full Pack
MOSFET N-CH 500V 11A TO-220F
Date Sheet

在庫數 9000

1+： $3.13027
10+： $2.95308
100+： $2.78593
500+： $2.62823
1000+： $2.47947

小計金額 $3.13027

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
Factory Lead Time：9 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Number of Pins：3
Weight：2.27g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：11A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：48W Tc
Turn Off Delay Time：120 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：FRFET®
Published：2013
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：48W
Case Connection：ISOLATED
Turn On Delay Time：24 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：550m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2055pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：55nC @ 10V
Rise Time：70ns
Vgs (Max)：±30V
Fall Time (Typ)：75 ns
Continuous Drain Current (ID)：11A
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain-source On Resistance-Max：0.55Ohm
Drain to Source Breakdown Voltage：500V
Pulsed Drain Current-Max (IDM)：44A
Avalanche Energy Rating (Eas)：670 mJ
Height：16.07mm
Length：10.36mm
Width：4.9mm
RoHS Status：ROHS3 Compliant

在庫數 9000

1+： $3.13027
10+： $2.95308
100+： $2.78593
500+： $2.62823
1000+： $2.47947

小計金額 $3.13027

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FQPF11N50CF