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FQPF13N50C
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-220-3 Full Pack
- MOSFET N-CH 500V 13A TO-220F
Date Sheet
在庫數 368
- 1+: $3.07836
- 10+: $2.90412
- 100+: $2.73973
- 500+: $2.58465
- 1000+: $2.43835
小計金額 $3.07836
仕様 よくある質問
- Lifecycle Status:ACTIVE, NOT REC (Last Updated: 2 days ago)
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Number of Pins:3
- Weight:2.27g
- Transistor Element Material:SILICON
- Number of Elements:1
- Power Dissipation (Max):48W Tc
- Turn Off Delay Time:130 ns
- Drive Voltage (Max Rds On, Min Rds On):10V
- Current - Continuous Drain (Id) @ 25℃:13A Tc
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Series:QFET®
- Published:2003
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Resistance:480mOhm
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:500V
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Current Rating:13A
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Qualification Status:Not Qualified
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:48W
- Case Connection:ISOLATED
- Turn On Delay Time:25 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:480m Ω @ 6.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:2055pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:56nC @ 10V
- Rise Time:100ns
- Vgs (Max):±30V
- Fall Time (Typ):100 ns
- Continuous Drain Current (ID):13A
- JEDEC-95 Code:TO-220AB
- Gate to Source Voltage (Vgs):30V
- Drain to Source Breakdown Voltage:500V
- Pulsed Drain Current-Max (IDM):52A
- Avalanche Energy Rating (Eas):860 mJ
- Length:10.16mm
- Height:9.19mm
- Width:4.7mm
- RoHS Status:RoHS Compliant
- Lead Free:Lead Free
在庫數 368
- 1+: $3.07836
- 10+: $2.90412
- 100+: $2.73973
- 500+: $2.58465
- 1000+: $2.43835
小計金額 $3.07836
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