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FQPF13N50C

在庫數 368

  • 1+: $3.07836
  • 10+: $2.90412
  • 100+: $2.73973
  • 500+: $2.58465
  • 1000+: $2.43835

小計金額 $3.07836

仕様 よくある質問
  • Lifecycle Status:ACTIVE, NOT REC (Last Updated: 2 days ago)
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Number of Pins:3
  • Weight:2.27g
  • Transistor Element Material:SILICON
  • Number of Elements:1
  • Power Dissipation (Max):48W Tc
  • Turn Off Delay Time:130 ns
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25℃:13A Tc
  • Operating Temperature:-55°C~150°C TJ
  • Packaging:Tube
  • Series:QFET®
  • Published:2003
  • JESD-609 Code:e3
  • Pbfree Code:yes
  • Part Status:Obsolete
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Resistance:480mOhm
  • Terminal Finish:Tin (Sn)
  • Voltage - Rated DC:500V
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Current Rating:13A
  • Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
  • Qualification Status:Not Qualified
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:48W
  • Case Connection:ISOLATED
  • Turn On Delay Time:25 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:480m Ω @ 6.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds:2055pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:56nC @ 10V
  • Rise Time:100ns
  • Vgs (Max):±30V
  • Fall Time (Typ):100 ns
  • Continuous Drain Current (ID):13A
  • JEDEC-95 Code:TO-220AB
  • Gate to Source Voltage (Vgs):30V
  • Drain to Source Breakdown Voltage:500V
  • Pulsed Drain Current-Max (IDM):52A
  • Avalanche Energy Rating (Eas):860 mJ
  • Length:10.16mm
  • Height:9.19mm
  • Width:4.7mm
  • RoHS Status:RoHS Compliant
  • Lead Free:Lead Free

在庫數 368

  • 1+: $3.07836
  • 10+: $2.90412
  • 100+: $2.73973
  • 500+: $2.58465
  • 1000+: $2.43835

小計金額 $3.07836

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