FDPF16N50

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3 Full Pack
MOSFET N-CH 500V 16A TO-220F
Date Sheet

在庫數 28900

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
Factory Lead Time：4 Weeks
Contact Plating：Tin
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Number of Pins：3
Weight：2.27g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：16A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：38.5W Tc
Turn Off Delay Time：65 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：UniFET™
Published：2004
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：38.5W
Case Connection：ISOLATED
Turn On Delay Time：40 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：380m Ω @ 8A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1945pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：45nC @ 10V
Rise Time：150ns
Vgs (Max)：±30V
Fall Time (Typ)：80 ns
Continuous Drain Current (ID)：16A
Threshold Voltage：5V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：500V
Pulsed Drain Current-Max (IDM)：64A
Avalanche Energy Rating (Eas)：780 mJ
Height：15.87mm
Length：10.16mm
Width：4.7mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 28900

小計金額 $0.00000

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FDPF16N50