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FDPF18N50
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-220-3 Full Pack
- MOSFET N-CH 500V 18A TO-220F
Date Sheet
在庫數 27900
- 1+: $3.53175
- 10+: $3.33184
- 100+: $3.14325
- 500+: $2.96533
- 1000+: $2.79748
小計金額 $3.53175
仕様 よくある質問
- Factory Lead Time:9 Weeks
- Contact Plating:Tin
- Package / Case:TO-220-3 Full Pack
- Mounting Type:Through Hole
- Mount:Through Hole
- Number of Pins:3
- Weight:2.27g
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:18A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Turn Off Delay Time:95 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:5V @ 250μA
- Power Dissipation (Max):38.5W Tc
- Number of Elements:1
- Published:2004
- Series:UniFET™
- Packaging:Tube
- Operating Temperature:-55°C~150°C TJ
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Resistance:265MOhm
- Additional Feature:FAST SWITCHING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Qualification Status:Not Qualified
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:38.5W
- Case Connection:ISOLATED
- Turn On Delay Time:55 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:265m Ω @ 9A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:2860pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:60nC @ 10V
- Rise Time:165ns
- Vgs (Max):±30V
- Fall Time (Typ):90 ns
- Continuous Drain Current (ID):18A
- Threshold Voltage:5V
- JEDEC-95 Code:TO-220AB
- Gate to Source Voltage (Vgs):30V
- Drain to Source Breakdown Voltage:500V
- Pulsed Drain Current-Max (IDM):72A
- Avalanche Energy Rating (Eas):945 mJ
- Width:4.7mm
- Length:10.16mm
- Height:9.19mm
- RoHS Status:ROHS3 Compliant
- REACH SVHC:not_compliant
- Lead Free:Lead Free











