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FDPF18N20FT
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-220-3 Full Pack
- MOSFET N-CH 200V 18A TO-220F-3
Date Sheet
在庫數 15950
- 1+: $1.87875
- 10+: $1.77240
- 100+: $1.67208
- 500+: $1.57743
- 1000+: $1.48814
小計金額 $1.87875
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time:9 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Number of Pins:3
- Weight:2.27g
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:18A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):41W Tc
- Turn Off Delay Time:50 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Series:UniFET™
- Published:2013
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:41W
- Case Connection:ISOLATED
- Turn On Delay Time:16 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:140m Ω @ 9A, 10V
- Vgs(th) (Max) @ Id:5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:1180pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
- Rise Time:50ns
- Vgs (Max):±30V
- Fall Time (Typ):40 ns
- Continuous Drain Current (ID):18A
- JEDEC-95 Code:TO-220AB
- Gate to Source Voltage (Vgs):30V
- Drain to Source Breakdown Voltage:200V
- Pulsed Drain Current-Max (IDM):72A
- Height:16.07mm
- Length:10.36mm
- Width:4.9mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
在庫數 15950
- 1+: $1.87875
- 10+: $1.77240
- 100+: $1.67208
- 500+: $1.57743
- 1000+: $1.48814
小計金額 $1.87875
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