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STW56NM60N

在庫數 34493

小計金額 $0.00000

仕様 よくある質問
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Number of Pins:3
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:45A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Power Dissipation (Max):300W Tc
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
  • Operating Temperature:150°C TJ
  • Packaging:Tube
  • Series:MDmesh™ II
  • Part Status:Obsolete
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • Base Part Number:STW56N
  • JESD-30 Code:R-PSFM-T3
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:300W
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:60m Ω @ 22.5A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:4800pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V
  • Vgs (Max):±25V
  • Continuous Drain Current (ID):45A
  • Gate to Source Voltage (Vgs):25V
  • Drain-source On Resistance-Max:0.06Ohm
  • Drain to Source Breakdown Voltage:600V
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant

在庫數 34493

小計金額 $0.00000

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