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STW56NM60N
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-247-3
- MOSFET N-Ch 600V 0.05 Ohm 45A MDmesh II FET
Date Sheet
在庫數 34493
小計金額 $0.00000
仕様 よくある質問
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:45A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):300W Tc
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
- Operating Temperature:150°C TJ
- Packaging:Tube
- Series:MDmesh™ II
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- Base Part Number:STW56N
- JESD-30 Code:R-PSFM-T3
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:300W
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:60m Ω @ 22.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:4800pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V
- Vgs (Max):±25V
- Continuous Drain Current (ID):45A
- Gate to Source Voltage (Vgs):25V
- Drain-source On Resistance-Max:0.06Ohm
- Drain to Source Breakdown Voltage:600V
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
在庫數 34493
小計金額 $0.00000
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