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FDD5680
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-Ch PowerTrench
Date Sheet
在庫數 360000
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time：8 Weeks
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins：3
- Weight：260.37mg
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：8.5A Ta
- Drive Voltage (Max Rds On, Min Rds On)：6V 10V
- Number of Elements：1
- Power Dissipation (Max)：2.8W Ta 60W Tc
- Turn Off Delay Time：35 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Series：PowerTrench®
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- Resistance：21mOhm
- Terminal Finish：Tin (Sn)
- Voltage - Rated DC：60V
- Terminal Form：GULL WING
- Current Rating：38A
- JESD-30 Code：R-PSSO-G2
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：60W
- Case Connection：DRAIN
- Turn On Delay Time：15 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：21m Ω @ 8.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：1835pF @ 30V
- Gate Charge (Qg) (Max) @ Vgs：46nC @ 10V
- Rise Time：9ns
- Vgs (Max)：±20V
- Fall Time (Typ)：16 ns
- Continuous Drain Current (ID)：8.5A
- Gate to Source Voltage (Vgs)：20V
- Drain to Source Breakdown Voltage：60V
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
在庫數 360000
小計金額 $0.00000
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