FCD600N60Z

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N CH 600V 7.4A DPAK
Date Sheet

在庫數 2110

1+： $2.29512
10+： $2.16521
100+： $2.04265
500+： $1.92703
1000+： $1.81795

小計金額 $2.29512

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
Factory Lead Time：15 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：7.4A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：89W Tc
Turn Off Delay Time：39 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Digi-Reel®
Series：SuperFET® II
Published：2010
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Base Part Number：FCD600N60
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：89W
Case Connection：DRAIN
Turn On Delay Time：13 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：600m Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1120pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
Rise Time：7ns
Drain to Source Voltage (Vdss)：600V
Vgs (Max)：±20V
Fall Time (Typ)：8 ns
Continuous Drain Current (ID)：7.4A
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.6Ohm
Drain to Source Breakdown Voltage：650V
Pulsed Drain Current-Max (IDM)：22.2A
Height：2.39mm
Length：6.73mm
Width：6.22mm
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2110

1+： $2.29512
10+： $2.16521
100+： $2.04265
500+： $1.92703
1000+： $1.81795

小計金額 $2.29512

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FCD600N60Z