STB155N3LH6

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 30V 80A D2PAK
Date Sheet

在庫數 635

1+： $2.63117
10+： $2.48224
100+： $2.34173
500+： $2.20918
1000+： $2.08413

小計金額 $2.63117

仕様よくある質問

Factory Lead Time：20 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：5V 10V
Current - Continuous Drain (Id) @ 25℃：80A Tc
Power Dissipation (Max)：110W Tc
Turn Off Delay Time：100 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.5V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Cut Tape (CT)
Series：DeepGATE™, STripFET™ VI
JESD-609 Code：e3
Part Status：ACTIVE (Last Updated: 7 months ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：3MOhm
Terminal Finish：Matte Tin (Sn) - annealed
Additional Feature：ULTRA-LOW RESISTANCE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB155N
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：110W
Case Connection：DRAIN
Turn On Delay Time：15 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：3m Ω @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds：3800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：80nC @ 5V
Rise Time：85ns
Vgs (Max)：±20V
Fall Time (Typ)：40 ns
Continuous Drain Current (ID)：80A
Threshold Voltage：1V
JEDEC-95 Code：TO-252
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
Avalanche Energy Rating (Eas)：525 mJ
Height：4.6mm
Length：10.75mm
Width：10.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 635

1+： $2.63117
10+： $2.48224
100+： $2.34173
500+： $2.20918
1000+： $2.08413

小計金額 $2.63117

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Phone

STB155N3LH6