FQB7N60TM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET 600V N-Channel QFET
Date Sheet

在庫數 190

1+： $0.54195
10+： $0.51127
100+： $0.48233
500+： $0.45503
1000+： $0.42927

小計金額 $0.54195

仕様よくある質問

Factory Lead Time：4 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Number of Elements：1
Power Dissipation (Max)：3.13W Ta 142W Tc
Turn Off Delay Time：65 ns
Current - Continuous Drain (Id) @ 25℃：7.4A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Published：2013
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：1Ohm
Terminal Finish：Tin (Sn)
HTS Code：8541.29.00.95
Voltage - Rated DC：600V
Terminal Form：GULL WING
Current Rating：7.4A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：3.13W
Case Connection：DRAIN
Turn On Delay Time：30 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1 Ω @ 3.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1430pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：38nC @ 10V
Rise Time：80ns
Vgs (Max)：±30V
Fall Time (Typ)：60 ns
Continuous Drain Current (ID)：7.4A
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：29.6A
Avalanche Energy Rating (Eas)：580 mJ
Width：9.65mm
Height：4.83mm
Length：10.67mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 190

1+： $0.54195
10+： $0.51127
100+： $0.48233
500+： $0.45503
1000+： $0.42927

小計金額 $0.54195

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FQB7N60TM