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STD7N52DK3
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-Ch 620V 0.98 ohm 6.2A SuperFREDmesh3
Date Sheet
在庫數 8090
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:NRND (Last Updated: 7 months ago)
- Factory Lead Time:12 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:6A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):90W Tc
- Turn Off Delay Time:37 ns
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Series:SuperFREDmesh3™
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Resistance:1.15Ohm
- Terminal Finish:Matte Tin (Sn) - annealed
- Additional Feature:ULTRA-LOW RESISTANCE
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Base Part Number:STD7
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:90W
- Turn On Delay Time:12 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:1.15 Ω @ 3A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds:870pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V
- Rise Time:22ns
- Drain to Source Voltage (Vdss):525V
- Vgs (Max):±30V
- Fall Time (Typ):22 ns
- Continuous Drain Current (ID):6A
- Threshold Voltage:3.75V
- Gate to Source Voltage (Vgs):30V
- Drain Current-Max (Abs) (ID):6A
- Drain to Source Breakdown Voltage:620V
- Pulsed Drain Current-Max (IDM):24A
- Avalanche Energy Rating (Eas):100 mJ
- Height:2.4mm
- Length:6.6mm
- Width:6.2mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 8090
小計金額 $0.00000
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