FQP15P12

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3
MOSFET P-CH 120V 15A TO-220
Date Sheet

在庫數 95792

1+： $1.82391
10+： $1.72067
100+： $1.62327
500+： $1.53139
1000+： $1.44470

小計金額 $1.82391

仕様よくある質問

Factory Lead Time：5 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3
Weight：1.8g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：15A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：100W Tc
Turn Off Delay Time：80 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tube
Series：QFET®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 week ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：-120V
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：-15A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：100W
Turn On Delay Time：15 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：200m Ω @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：38nC @ 10V
Rise Time：100ns
Drain to Source Voltage (Vdss)：120V
Vgs (Max)：±30V
Fall Time (Typ)：80 ns
Continuous Drain Current (ID)：15A
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain-source On Resistance-Max：0.2Ohm
Drain to Source Breakdown Voltage：-120V
Pulsed Drain Current-Max (IDM)：60A
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 95792

1+： $1.82391
10+： $1.72067
100+： $1.62327
500+： $1.53139
1000+： $1.44470

小計金額 $1.82391

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FQP15P12