FQU2N60CTU

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET 600V N-Channel Adv Q-FET C-Series
Date Sheet

在庫數 350

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 5 days ago)
Factory Lead Time：6 Weeks
Contact Plating：Tin
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins：3
Weight：343.08mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：1.9A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 44W Tc
Turn Off Delay Time：24 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：QFET®
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：4.7Ohm
Voltage - Rated DC：600V
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Current Rating：1.9A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：9 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4.7 Ω @ 950mA, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：235pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
Rise Time：25ns
Vgs (Max)：±30V
Fall Time (Typ)：28 ns
Continuous Drain Current (ID)：1.9A
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：7.6A
Height：6.1mm
Length：6.6mm
Width：2.3mm
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 350

小計金額 $0.00000

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FQU2N60CTU