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STD3NK60Z-1
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STMicroelectronics
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Transistors - FETs, MOSFETs - Single
- TO-251-3 Short Leads, IPak, TO-251AA
- STMICROELECTRONICS STD3NK60Z-1 Power MOSFET, N Channel, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
Date Sheet
在庫數 4090
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 2 weeks ago)
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins：3
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：2.4A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：45W Tc
- Turn Off Delay Time：19 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：SuperMESH™
- JESD-609 Code：e3
- Part Status：Not For New Designs
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Matte Tin (Sn) - annealed
- Peak Reflow Temperature (Cel)：260
- Time@Peak Reflow Temperature-Max (s)：30
- Base Part Number：STD3N
- Pin Count：3
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：45W
- Turn On Delay Time：9 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：3.6 Ω @ 1.2A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds：311pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：11.8nC @ 10V
- Rise Time：14ns
- Vgs (Max)：±30V
- Fall Time (Typ)：14 ns
- Continuous Drain Current (ID)：2.4A
- Threshold Voltage：3.75V
- Gate to Source Voltage (Vgs)：30V
- Drain to Source Breakdown Voltage：600V
- Pulsed Drain Current-Max (IDM)：9.6A
- Height：6.2mm
- Length：6.6mm
- Width：2.4mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
在庫數 4090
小計金額 $0.00000
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