FQI7N60TU

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-262-3 Long Leads, I2Pak, TO-262AA
MOSFET N-CH 600V 7.4A I2PAK
Date Sheet

在庫數 28000

1+： $3.28878
10+： $3.10262
100+： $2.92700
500+： $2.76132
1000+： $2.60502

小計金額 $3.28878

仕様よくある質問

Factory Lead Time：5 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-262-3 Long Leads, I2Pak, TO-262AA
Weight：2.084g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：7.4A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：3.13W Ta 142W Tc
Turn Off Delay Time：65 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：QFET®
Published：2014
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 week ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：600V
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：7.4A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSIP-T3
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：3.13W
Turn On Delay Time：30 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1 Ω @ 3.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1430pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：38nC @ 10V
Rise Time：80ns
Vgs (Max)：±30V
Fall Time (Typ)：60 ns
Continuous Drain Current (ID)：7.4A
Gate to Source Voltage (Vgs)：30V
Drain-source On Resistance-Max：1Ohm
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：29.6A
Avalanche Energy Rating (Eas)：580 mJ
REACH SVHC：not_compliant
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 28000

1+： $3.28878
10+： $3.10262
100+： $2.92700
500+： $2.76132
1000+： $2.60502

小計金額 $3.28878

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FQI7N60TU