STB60NF10T4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N Ch 100V 0.019Ohm 80A
Date Sheet

在庫數 31518

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
Factory Lead Time：12 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：80A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：300W Tc
Turn Off Delay Time：82 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：STripFET™ II
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：23mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Voltage - Rated DC：100V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Current Rating：80A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB60N
Pin Count：3
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：300W
Case Connection：DRAIN
Turn On Delay Time：17 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：23m Ω @ 40A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：4270pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：104nC @ 10V
Rise Time：56ns
Vgs (Max)：±20V
Fall Time (Typ)：23 ns
Continuous Drain Current (ID)：40A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：100V
Dual Supply Voltage：100V
Avalanche Energy Rating (Eas)：485 mJ
Nominal Vgs：3 V
Height：4.6mm
Length：10.75mm
Width：10.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 31518

小計金額 $0.00000

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STB60NF10T4