STD14NM50N

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans MOSFET N-CH 500V 12A Automotive 3-Pin(2 Tab) DPAK T/R
Date Sheet

在庫數 2276

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：NRND (Last Updated: 8 months ago)
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：90W Tc
Turn Off Delay Time：42 ns
Operating Temperature：150°C TJ
Packaging：Cut Tape (CT)
Series：MDmesh™ II
JESD-609 Code：e3
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：320mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Position：SINGLE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Base Part Number：STD14
Pin Count：3
JESD-30 Code：R-PSSO-G2
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：90W
Case Connection：DRAIN
Turn On Delay Time：10.2 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：320m Ω @ 6A, 10V
Vgs(th) (Max) @ Id：4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds：816pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
Rise Time：9ns
Vgs (Max)：±25V
Fall Time (Typ)：32 ns
Continuous Drain Current (ID)：12A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：500V
Pulsed Drain Current-Max (IDM)：48A
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2276

小計金額 $0.00000

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STD14NM50N