STB95N3LLH6

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Trans MOSFET N-CH 30V 80A 3-Pin(2 Tab) D2PAK T/R
Date Sheet

在庫數 63259

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：80A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：70W Tc
Turn Off Delay Time：24.5 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.5V @ 250μA
Operating Temperature：175°C TJ
Packaging：Cut Tape (CT)
Series：DeepGATE™, STripFET™ VI
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Position：SINGLE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Base Part Number：STB95N
JESD-30 Code：R-PSSO-G2
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：70W
Case Connection：DRAIN
Turn On Delay Time：19 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4.2m Ω @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds：2200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：24.5nC @ 4.5V
Rise Time：91ns
Drain to Source Voltage (Vdss)：30V
Vgs (Max)：±20V
Fall Time (Typ)：23.4 ns
Continuous Drain Current (ID)：80A
Threshold Voltage：1V
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.007Ohm
Height：4.6mm
Length：10.75mm
Width：10.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant

在庫數 63259

小計金額 $0.00000

類似スペック製品

STB95N3LLH6 STMicroelectronics
見積かごへ在庫數 63259
IRF3709STRLPBF Infineon Technologies
見積かごへ在庫數 385
IRF3709ZSTRRPBF Infineon Technologies
見積かごへ在庫數 800
STB155N3LH6 STMicroelectronics
見積かごへ在庫數 10000
IRF3709SPBF Infineon Technologies
見積かごへ在庫數 16740

Phone

STB95N3LLH6