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STD95NH02LT4
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-Ch 24 Volt 80 Amp
Date Sheet
在庫數 23200
小計金額 $0.00000
仕様 よくある質問
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:80A Tc
- Drive Voltage (Max Rds On, Min Rds On):5V 10V
- Number of Elements:1
- Power Dissipation (Max):100W Tc
- Turn Off Delay Time:47 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:STripFET™
- JESD-609 Code:e3
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Resistance:5mOhm
- Terminal Finish:Matte Tin (Sn)
- Additional Feature:LOW THRESHOLD
- Voltage - Rated DC:30V
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Reach Compliance Code:not_compliant
- Current Rating:80A
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:STD95
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Qualification Status:Not Qualified
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:100W
- Case Connection:DRAIN
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:5m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id:1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:2070pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs:17nC @ 5V
- Rise Time:110ns
- Vgs (Max):±20V
- Fall Time (Typ):20 ns
- Continuous Drain Current (ID):80A
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:24V
- Pulsed Drain Current-Max (IDM):320A
- Avalanche Energy Rating (Eas):600 mJ
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 23200
小計金額 $0.00000
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