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FDMC86248
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-PowerTDFN
- FAIRCHILD SEMICONDUCTOR FDMC86248 MOSFET Transistor, N Channel, 13 A, 150 V, 0.069 ohm, 10 V, 3.2 V
Date Sheet
在庫數 70
- 1+： $2.23868
- 10+： $2.11196
- 100+： $1.99242
- 500+： $1.87964
- 1000+： $1.77325
小計金額 $2.23868
仕様 よくある質問
- Factory Lead Time：13 Weeks
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Number of Pins：8
- Weight：32.13mg
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：3.4A Ta
- Drive Voltage (Max Rds On, Min Rds On)：6V 10V
- Number of Elements：1
- Power Dissipation (Max)：2.3W Ta 36W Tc
- Turn Off Delay Time：11 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250mA
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Series：PowerTrench®
- Published：2010
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：5
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Terminal Position：DUAL
- JESD-30 Code：S-PDSO-N5
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：2.3W
- Case Connection：DRAIN
- Turn On Delay Time：6.9 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：90m Ω @ 3.4A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：525pF @ 75V
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 10V
- Rise Time：1.4ns
- Drain to Source Voltage (Vdss)：150V
- Vgs (Max)：±20V
- Fall Time (Typ)：2.8 ns
- Continuous Drain Current (ID)：3.4A
- JEDEC-95 Code：MO-240BA
- Gate to Source Voltage (Vgs)：20V
- Drain-source On Resistance-Max：0.09Ohm
- Avalanche Energy Rating (Eas)：37 mJ
- Nominal Vgs：3.2 V
- Height：1.05mm
- Length：3.3mm
- Width：3.3mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
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