MTB30P06VT4

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET P-CH 60V 30A D2PAK
Date Sheet

在庫數 2300

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：30A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：3W Ta 125W Tc
Turn Off Delay Time：98 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Published：2010
JESD-609 Code：e0
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn80Pb20)
Additional Feature：AVALANCHE RATED
Voltage - Rated DC：-60V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：240
Reach Compliance Code：not_compliant
Current Rating：-30A
Time@Peak Reflow Temperature-Max (s)：30
Pin Count：3
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：3W
Case Connection：DRAIN
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：80m Ω @ 15A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：80nC @ 10V
Rise Time：25.9ns
Drain to Source Voltage (Vdss)：60V
Vgs (Max)：±15V
Fall Time (Typ)：52.4 ns
Continuous Drain Current (ID)：30A
Gate to Source Voltage (Vgs)：15V
Drain-source On Resistance-Max：0.08Ohm
Drain to Source Breakdown Voltage：-60V
Pulsed Drain Current-Max (IDM)：105A
Avalanche Energy Rating (Eas)：450 mJ
RoHS Status：Non-RoHS Compliant
Lead Free：Contains Lead

在庫數 2300

小計金額 $0.00000

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MTB30P06VT4