NTB25P06

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET P-CH 60V 27.5A D2PAK
Date Sheet

在庫數 475

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：27.5A Ta
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：120W Tj
Turn Off Delay Time：43 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tube
Published：2006
JESD-609 Code：e0
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Terminal Finish：Tin/Lead (Sn/Pb)
HTS Code：8541.29.00.95
Voltage - Rated DC：60V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：225
Reach Compliance Code：not_compliant
Current Rating：27.5A
Time@Peak Reflow Temperature-Max (s)：30
Pin Count：3
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：120W
Case Connection：DRAIN
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：82m Ω @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1680pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：50nC @ 10V
Rise Time：72ns
Vgs (Max)：±15V
Polarity/Channel Type：N-CHANNEL
Fall Time (Typ)：190 ns
Continuous Drain Current (ID)：27.5A
Gate to Source Voltage (Vgs)：15V
Drain Current-Max (Abs) (ID)：25A
Drain-source On Resistance-Max：0.082Ohm
Drain to Source Breakdown Voltage：-60V
Pulsed Drain Current-Max (IDM)：80A
Avalanche Energy Rating (Eas)：600 mJ
RoHS Status：Non-RoHS Compliant
Lead Free：Contains Lead

在庫數 475

小計金額 $0.00000

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