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NTD4854NT4G
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-CH 25V 15.7A DPAK
Date Sheet
在庫數 400
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:LAST SHIPMENTS (Last Updated: 4 days ago)
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:4
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:15.7A Ta 128A Tc
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):1.43W Ta 93.75W Tc
- Turn Off Delay Time:41 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Published:2008
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Pin Count:4
- JESD-30 Code:R-PSSO-G2
- Qualification Status:Not Qualified
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:2.5W
- Case Connection:DRAIN
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:3.6m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:4600pF @ 12V
- Gate Charge (Qg) (Max) @ Vgs:49.2nC @ 4.5V
- Rise Time:17.6ns
- Vgs (Max):±20V
- Fall Time (Typ):8.5 ns
- Continuous Drain Current (ID):128A
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):15.7A
- Drain to Source Breakdown Voltage:25V
- Pulsed Drain Current-Max (IDM):225A
- Avalanche Energy Rating (Eas):338 mJ
- RoHS Status:RoHS Compliant
- Lead Free:Lead Free
在庫數 400
小計金額 $0.00000
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