NDB6020P

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor -20V, -24A, 50mO
Date Sheet

在庫數 26550

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Turn Off Delay Time：120 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：1V @ 250μA
Current - Continuous Drain (Id) @ 25℃：24A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V
Number of Elements：1
Power Dissipation (Max)：60W Tc
Published：1998
Operating Temperature：-65°C~175°C TJ
Packaging：Tape & Reel (TR)
JESD-609 Code：e3
Pbfree Code：yes
Part Status：LAST SHIPMENTS (Last Updated: 3 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：50mOhm
Terminal Finish：Tin (Sn)
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：-20V
Terminal Form：GULL WING
Current Rating：-24A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：60W
Case Connection：DRAIN
Turn On Delay Time：15 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：50m Ω @ 12A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1590pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：35nC @ 5V
Rise Time：27ns
Drain to Source Voltage (Vdss)：20V
Vgs (Max)：±8V
Fall Time (Typ)：70 ns
Continuous Drain Current (ID)：24A
Threshold Voltage：-700mV
Gate to Source Voltage (Vgs)：8V
Drain to Source Breakdown Voltage：-20V
Pulsed Drain Current-Max (IDM)：70A
Length：10.67mm
Width：4.83mm
Height：11.33mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 26550

小計金額 $0.00000

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NDB6020P