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NTA4151PT1
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- SC-75, SOT-416
- MOSFET P-CH 20V 0.76A SOT-416
Date Sheet
在庫數 267800
小計金額 $0.00000
仕様 よくある質問
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：760mA Tj
- Drive Voltage (Max Rds On, Min Rds On)：1.8V 4.5V
- Number of Elements：1
- Power Dissipation (Max)：301mW Tj
- Turn Off Delay Time：29 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2006
- JESD-609 Code：e0
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin/Lead (Sn/Pb)
- Voltage - Rated DC：-20V
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：235
- Reach Compliance Code：not_compliant
- Current Rating：-760mA
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Pin Count：3
- JESD-30 Code：R-PDSO-G3
- Qualification Status：Not Qualified
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：301mW
- FET Type：P-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：360m Ω @ 350mA, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：156pF @ 5V
- Gate Charge (Qg) (Max) @ Vgs：2.1nC @ 4.5V
- Rise Time：8.2ns
- Drain to Source Voltage (Vdss)：20V
- Vgs (Max)：±6V
- Fall Time (Typ)：8.2 ns
- Continuous Drain Current (ID)：760mA
- Gate to Source Voltage (Vgs)：6V
- Drain Current-Max (Abs) (ID)：0.76A
- Drain-source On Resistance-Max：0.36Ohm
- Drain to Source Breakdown Voltage：-20V
- RoHS Status：Non-RoHS Compliant
- Lead Free：Contains Lead
在庫數 267800
小計金額 $0.00000
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