NTP85N03G

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3
MOSFET N-CH 28V 85A TO-220AB
Date Sheet

在庫數 38658

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3
Number of Pins：3
Weight：4.535924g
Transistor Element Material：SILICON
Number of Elements：1
Power Dissipation (Max)：80W Tc
Turn Off Delay Time：32 ns
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Current - Continuous Drain (Id) @ 25℃：85A Tc
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：28V
Peak Reflow Temperature (Cel)：260
Current Rating：85A
Time@Peak Reflow Temperature-Max (s)：40
Pin Count：3
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：80W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：6.8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2150pF @ 24V
Gate Charge (Qg) (Max) @ Vgs：29nC @ 4.5V
Rise Time：22ns
Vgs (Max)：±20V
Fall Time (Typ)：30 ns
Continuous Drain Current (ID)：85A
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：15A
Drain-source On Resistance-Max：0.0068Ohm
Drain to Source Breakdown Voltage：28V
Pulsed Drain Current-Max (IDM)：45A
Avalanche Energy Rating (Eas)：61 mJ
Length：6.35mm
Height：6.35mm
Width：25.4mm
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 38658

小計金額 $0.00000

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NTP85N03G