FDB8880

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET NCH PWR TRNCH MOSFET 30V 54A 11.6 OHMS
Date Sheet

在庫數 646

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Turn Off Delay Time：47 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.5V @ 250μA
Current - Continuous Drain (Id) @ 25℃：11A Ta 54A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：55W Tc
Published：2005
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：LAST SHIPMENTS (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：30V
Terminal Form：GULL WING
Current Rating：54A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：55W
Case Connection：DRAIN
Turn On Delay Time：8 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：11.6m Ω @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1240pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：29nC @ 10V
Rise Time：107ns
Vgs (Max)：±20V
Fall Time (Typ)：51 ns
Continuous Drain Current (ID)：54A
Threshold Voltage：2.5V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
Nominal Vgs：2.5 V
Length：10.67mm
Width：11.33mm
Height：4.83mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 646

小計金額 $0.00000

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FDB8880