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FDB8445
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ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- MOSFET N-CH 40V 70A D2PAK
Date Sheet
在庫數 22800
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time:8 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins:3
- Weight:1.31247g
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:70A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):92W Tc
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
- Turn Off Delay Time:36 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2006
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- Termination:SMD/SMT
- ECCN Code:EAR99
- Resistance:9MOhm
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:40V
- Terminal Form:GULL WING
- Current Rating:70A
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:92W
- Case Connection:DRAIN
- Turn On Delay Time:10 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:9m Ω @ 70A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:3805pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:62nC @ 10V
- Rise Time:19ns
- Vgs (Max):±20V
- Fall Time (Typ):16 ns
- Continuous Drain Current (ID):70A
- Threshold Voltage:2.5V
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:40V
- Dual Supply Voltage:40V
- Nominal Vgs:2.5 V
- Height:4.83mm
- Length:10.97mm
- Width:9.65mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free











