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FDC634P
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- SOT-23-6 Thin, TSOT-23-6
- MOSFET P-CH 20V 3.5A SSOT-6
Date Sheet
在庫數 38000
- 1+: $0.78721
- 10+: $0.74265
- 100+: $0.70061
- 500+: $0.66096
- 1000+: $0.62354
小計金額 $0.78721
仕様 よくある質問
- Factory Lead Time:10 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Number of Pins:6
- Weight:36mg
- Transistor Element Material:SILICON
- Turn Off Delay Time:27 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:1.5V @ 250μA
- Current - Continuous Drain (Id) @ 25℃:3.5A Ta
- Drive Voltage (Max Rds On, Min Rds On):2.5V 4.5V
- Number of Elements:1
- Power Dissipation (Max):1.6W Ta
- Published:2001
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:6
- Termination:SMD/SMT
- ECCN Code:EAR99
- Resistance:80MOhm
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:-20V
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Current Rating:-3.5A
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:1.6W
- Turn On Delay Time:10 ns
- FET Type:P-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:80m Ω @ 3.5A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:779pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
- Rise Time:9ns
- Drain to Source Voltage (Vdss):20V
- Vgs (Max):±8V
- Fall Time (Typ):9 ns
- Continuous Drain Current (ID):-3.5A
- Threshold Voltage:-800mV
- Gate to Source Voltage (Vgs):8V
- Drain to Source Breakdown Voltage:-20V
- Dual Supply Voltage:-20V
- Nominal Vgs:-800 mV
- Width:1.7mm
- Height:1mm
- Length:3mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free











