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STH315N10F7-6
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STMicroelectronics
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Transistors - FETs, MOSFETs - Single
- TO-263-7, D2Pak (6 Leads + Tab)
- STMICROELECTRONICS STH315N10F7-6 MOSFET Transistor, N Channel, 180 A, 100 V, 0.0021 ohm, 10 V, 3.5 V
Date Sheet
在庫數 100000
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-263-7, D2Pak (6 Leads + Tab)
- Number of Pins：7
- Weight：1.59999g
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：180A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：315W Tc
- Turn Off Delay Time：148 ns
- Operating Temperature：-55°C~175°C TJ
- Packaging：Tape & Reel (TR)
- Series：Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：6
- ECCN Code：EAR99
- Additional Feature：ULTRA LOW RESISTANCE
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Base Part Number：STH315
- JESD-30 Code：R-PSSO-G6
- Number of Channels：1
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：315W
- Case Connection：DRAIN
- Turn On Delay Time：62 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：2.3m Ω @ 60A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：12800pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：180nC @ 10V
- Rise Time：108ns
- Vgs (Max)：±20V
- Fall Time (Typ)：40 ns
- Continuous Drain Current (ID)：180A
- Threshold Voltage：3.5V
- Gate to Source Voltage (Vgs)：20V
- Drain-source On Resistance-Max：0.0023Ohm
- Drain to Source Breakdown Voltage：100V
- REACH SVHC：No SVHC
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
在庫數 100000
小計金額 $0.00000
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