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FMB3906
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Arrays
- SOT-23-6 Thin, TSOT-23-6
- Bipolar Transistors - BJT PNP Multi-Chip Trans General Purpose
Date Sheet
在庫數 21000
- 1+: $0.49018
- 10+: $0.46243
- 100+: $0.43626
- 500+: $0.41156
- 1000+: $0.38827
小計金額 $0.49018
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 5 days ago)
- Factory Lead Time:5 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Number of Pins:6
- Weight:36mg
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:40V
- Collector-Emitter Saturation Voltage:400mV
- Number of Elements:2
- hFEMin:100
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2017
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:6
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:-40V
- Max Power Dissipation:700mW
- Terminal Form:GULL WING
- Current Rating:-200mA
- Frequency:200MHz
- Base Part Number:FMB3906
- Polarity:PNP
- Element Configuration:Dual
- Power Dissipation:700mW
- Transistor Application:SWITCHING
- Gain Bandwidth Product:200MHz
- Transistor Type:2 PNP (Dual)
- Collector Emitter Voltage (VCEO):40V
- Max Collector Current:200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
- Transition Frequency:200MHz
- Max Breakdown Voltage:40V
- Collector Base Voltage (VCBO):-40V
- Emitter Base Voltage (VEBO):-5V
- Height:1mm
- Length:3mm
- Width:1.7mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 21000
- 1+: $0.49018
- 10+: $0.46243
- 100+: $0.43626
- 500+: $0.41156
- 1000+: $0.38827
小計金額 $0.49018
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