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BC557BTF
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- 50 V, 100 mA PNP Bipolar Junction Epitaxial Silicon Transistor
Date Sheet
在庫數 3911
- 1+: $0.20209
- 10+: $0.19065
- 100+: $0.17986
- 500+: $0.16968
- 1000+: $0.16008
小計金額 $0.20209
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time:7 Weeks
- Contact Plating:Tin
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins:3
- Weight:240mg
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:45V
- Collector-Emitter Saturation Voltage:-250mV
- Number of Elements:1
- hFEMin:110
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2007
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Voltage - Rated DC:-45V
- Max Power Dissipation:500mW
- Terminal Position:BOTTOM
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Current Rating:-100mA
- Frequency:150MHz
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Base Part Number:BC557
- Qualification Status:Not Qualified
- Element Configuration:Single
- Power Dissipation:500mW
- Transistor Application:SWITCHING
- Gain Bandwidth Product:150MHz
- Polarity/Channel Type:PNP
- Transistor Type:PNP
- Collector Emitter Voltage (VCEO):45V
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA 5V
- Current - Collector Cutoff (Max):15nA ICBO
- Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
- Transition Frequency:150MHz
- Max Breakdown Voltage:45V
- Collector Base Voltage (VCBO):-50V
- Emitter Base Voltage (VEBO):-5V
- Height:5.33mm
- Length:5.2mm
- Width:4.19mm
- REACH SVHC:No SVHC
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free












