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2N5302G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-204AA, TO-3
- ON SEMICONDUCTOR - 2N5302G - ?????????? ??????????, ?????????????, NPN, 60 ?, 2 ???, 200 ??, 30 ?, 2 hFE
Date Sheet
在庫數 41
- 1+: $3.10516
- 10+: $2.92939
- 100+: $2.76358
- 500+: $2.60715
- 1000+: $2.45957
小計金額 $3.10516
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time:2 Weeks
- Mounting Type:Through Hole
- Package / Case:TO-204AA, TO-3
- Surface Mount:NO
- Number of Pins:2
- Weight:13.607771g
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:60V
- Collector-Emitter Saturation Voltage:750mV
- Number of Elements:1
- hFEMin:15
- Operating Temperature:-65°C~200°C TJ
- Packaging:Tray
- Published:2006
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:60V
- Max Power Dissipation:200W
- Terminal Position:BOTTOM
- Terminal Form:PIN/PEG
- Peak Reflow Temperature (Cel):260
- Current Rating:30A
- Frequency:2MHz
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:2N5302
- Pin Count:2
- Element Configuration:Single
- Power Dissipation:200W
- Case Connection:COLLECTOR
- Transistor Application:SWITCHING
- Gain Bandwidth Product:2MHz
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):60V
- Max Collector Current:30A
- DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 15A 2V
- Current - Collector Cutoff (Max):5mA
- Vce Saturation (Max) @ Ib, Ic:3V @ 6A, 30A
- Transition Frequency:2MHz
- Collector Base Voltage (VCBO):60V
- Height:25.4mm
- Length:38.1mm
- Width:25.4mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free











