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MJ11012G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-204AA, TO-3
- Trans Darlington NPN 60V 30A 3-Pin(2 Tab) TO-3 Tray
Date Sheet
在庫數 8
- 1+： $13.17522
- 10+： $12.42945
- 100+： $11.72590
- 500+： $11.06217
- 1000+： $10.43601
小計金額 $13.17522
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 21 hours ago)
- Factory Lead Time：2 Weeks
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Surface Mount：NO
- Number of Pins：2
- Weight：4.535924g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：60V
- Collector-Emitter Saturation Voltage：4V
- Number of Elements：1
- Operating Temperature：-55°C~200°C TJ
- Packaging：Tray
- Published：2008
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Voltage - Rated DC：60V
- Max Power Dissipation：200W
- Terminal Position：BOTTOM
- Terminal Form：PIN/PEG
- Peak Reflow Temperature (Cel)：260
- Current Rating：30A
- Time@Peak Reflow Temperature-Max (s)：40
- Pin Count：2
- Polarity：NPN
- Element Configuration：Single
- Power Dissipation：200W
- Case Connection：COLLECTOR
- Transistor Application：AMPLIFIER
- Transistor Type：NPN - Darlington
- Collector Emitter Voltage (VCEO)：60V
- Max Collector Current：30A
- DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 20A 5V
- Current - Collector Cutoff (Max)：1mA
- Vce Saturation (Max) @ Ib, Ic：4V @ 300mA, 30A
- Transition Frequency：4MHz
- Frequency - Transition：4MHz
- Collector Base Voltage (VCBO)：60V
- Emitter Base Voltage (VEBO)：5V
- Continuous Collector Current：30A
- Height：26.67mm
- Length：39.37mm
- Width：8.509mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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