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MJE803G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-225AA, TO-126-3
- TRANS NPN DARL 80V 4A TO225AA
Date Sheet
在庫數 20888
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time：2 Weeks
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Surface Mount：NO
- Number of Pins：3
- Weight：4.535924g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：80V
- Collector-Emitter Saturation Voltage：2.5V
- Number of Elements：1
- hFEMin：100
- Operating Temperature：-55°C~150°C TJ
- Packaging：Bulk
- Published：2000
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Additional Feature：BUILT IN BIAS RESISTOR
- Voltage - Rated DC：80V
- Max Power Dissipation：40W
- Peak Reflow Temperature (Cel)：260
- Current Rating：4A
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：MJE803
- Pin Count：3
- Polarity：NPN
- Element Configuration：Single
- Power Dissipation：40W
- Transistor Application：AMPLIFIER
- Halogen Free：Halogen Free
- Transistor Type：NPN - Darlington
- Collector Emitter Voltage (VCEO)：80V
- Max Collector Current：4A
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A 3V
- Current - Collector Cutoff (Max)：100μA
- Vce Saturation (Max) @ Ib, Ic：2.8V @ 40mA, 2A
- Transition Frequency：1MHz
- Collector Base Voltage (VCBO)：80V
- Emitter Base Voltage (VEBO)：5V
- Height：6.35mm
- Length：6.35mm
- Width：6.35mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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