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BDV64BG
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-247-3
- Trans Darlington PNP 100V 10A 3-Pin(3 Tab) TO-247 Rail
Date Sheet
在庫數 54
- 1+: $3.30530
- 10+: $3.11821
- 100+: $2.94171
- 500+: $2.77520
- 1000+: $2.61811
小計金額 $3.30530
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time:2 Weeks
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Surface Mount:NO
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:100V
- Collector-Emitter Saturation Voltage:2V
- Number of Elements:1
- hFEMin:1000
- Operating Temperature:-65°C~150°C TJ
- Packaging:Tube
- Published:2002
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:-100V
- Max Power Dissipation:125W
- Peak Reflow Temperature (Cel):260
- Current Rating:-10A
- Time@Peak Reflow Temperature-Max (s):40
- Pin Count:3
- Polarity:PNP
- Element Configuration:Single
- Power Dissipation:125W
- Case Connection:COLLECTOR
- Transistor Application:AMPLIFIER
- Transistor Type:PNP - Darlington
- Collector Emitter Voltage (VCEO):100V
- Max Collector Current:10A
- DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 5A 4V
- Current - Collector Cutoff (Max):1mA
- Vce Saturation (Max) @ Ib, Ic:2V @ 20mA, 5A
- Transition Frequency:0.1MHz
- Collector Base Voltage (VCBO):100V
- Emitter Base Voltage (VEBO):5V
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free












