日本語
人気検索：
(0)
画像はあくまで参考です。
BD179G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-225AA, TO-126-3
- TRANS NPN 80V 3A TO-225
Date Sheet
在庫數 1
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time：2 Weeks
- Contact Plating：Tin
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Surface Mount：NO
- Number of Pins：3
- Weight：4.535924g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：80V
- Collector-Emitter Saturation Voltage：800mV
- Number of Elements：1
- hFEMin：63
- Operating Temperature：-65°C~150°C TJ
- Packaging：Bulk
- Published：2006
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：80V
- Max Power Dissipation：30W
- Peak Reflow Temperature (Cel)：260
- Current Rating：3A
- Frequency：3MHz
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：BD179
- Pin Count：3
- Element Configuration：Single
- Power Dissipation：30W
- Transistor Application：AMPLIFIER
- Gain Bandwidth Product：3MHz
- Polarity/Channel Type：NPN
- Transistor Type：NPN
- Collector Emitter Voltage (VCEO)：80V
- Max Collector Current：3A
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA 2V
- Current - Collector Cutoff (Max)：100μA ICBO
- Vce Saturation (Max) @ Ib, Ic：800mV @ 100mA, 1A
- Transition Frequency：3MHz
- Collector Base Voltage (VCBO)：80V
- Emitter Base Voltage (VEBO)：5V
- Height：6.35mm
- Length：31.75mm
- Width：6.35mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
サポートセンター
購入サービス
プライバシーと規約
Kynix について
お問合せ
