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2N5885G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-204AA, TO-3
- ON SEMICONDUCTOR - 2N5885G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 4 MHz, 200 W, 50 A, 4 hFE
Date Sheet
在庫數 70
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time：2 Weeks
- Contact Plating：Tin
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Surface Mount：NO
- Number of Pins：2
- Weight：4.535924g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：60V
- Collector-Emitter Saturation Voltage：1V
- Number of Elements：1
- hFEMin：20
- Operating Temperature：-65°C~200°C TJ
- Packaging：Tray
- Published：2005
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- Voltage - Rated DC：60V
- Max Power Dissipation：200W
- Terminal Position：BOTTOM
- Terminal Form：PIN/PEG
- Peak Reflow Temperature (Cel)：260
- Current Rating：600mA
- Frequency：4MHz
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：2N5885
- Pin Count：2
- Element Configuration：Single
- Power Dissipation：200W
- Case Connection：COLLECTOR
- Transistor Application：SWITCHING
- Gain Bandwidth Product：4MHz
- Polarity/Channel Type：NPN
- Transistor Type：NPN
- Collector Emitter Voltage (VCEO)：60V
- Max Collector Current：25A
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 10A 4V
- Current - Collector Cutoff (Max)：2mA
- Vce Saturation (Max) @ Ib, Ic：4V @ 6.25A, 25A
- Transition Frequency：4MHz
- Collector Base Voltage (VCBO)：60V
- Emitter Base Voltage (VEBO)：5V
- Height：8.51mm
- Length：39.37mm
- Width：26.67mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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