画像はあくまで参考です。
MPSA14RLRA
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- TRANS NPN DARL 30V 0.5A TO92
Date Sheet
在庫數 442
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:OBSOLETE (Last Updated: 1 week ago)
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:30V
- Number of Elements:1
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2005
- JESD-609 Code:e0
- Pbfree Code:no
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin/Lead (Sn/Pb)
- HTS Code:8541.21.00.75
- Voltage - Rated DC:30V
- Max Power Dissipation:625mW
- Terminal Position:BOTTOM
- Peak Reflow Temperature (Cel):240
- Reach Compliance Code:not_compliant
- Current Rating:500mA
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:MPSA14
- Pin Count:3
- Qualification Status:Not Qualified
- Polarity:NPN
- Element Configuration:Single
- Power Dissipation:625mW
- Transistor Application:AMPLIFIER
- Transistor Type:NPN - Darlington
- Collector Emitter Voltage (VCEO):30V
- Max Collector Current:500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:20000 @ 100mA 5V
- Current - Collector Cutoff (Max):100nA ICBO
- Vce Saturation (Max) @ Ib, Ic:1.5V @ 100μA, 100mA
- Transition Frequency:125MHz
- Max Breakdown Voltage:30V
- Frequency - Transition:125MHz
- Collector Base Voltage (VCBO):30V
- Emitter Base Voltage (VEBO):10V
- Continuous Collector Current:500mA
- RoHS Status:Non-RoHS Compliant
- Lead Free:Contains Lead
在庫數 442
小計金額 $0.00000
類似スペック製品











