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STT818B
-
STMicroelectronics
-
Transistors - Bipolar (BJT) - Single
- SOT-23-6
- TRANS PNP 30V 3A SOT23-6
Date Sheet
在庫數 15000
- 1+: $0.70672
- 10+: $0.66672
- 100+: $0.62898
- 500+: $0.59338
- 1000+: $0.55979
小計金額 $0.70672
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time:8 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6
- Number of Pins:6
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:30V
- Collector-Emitter Saturation Voltage:-210mV
- Power Dissipation (Max):1.2W
- Number of Elements:1
- hFEMin:100
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:6
- ECCN Code:EAR99
- Voltage - Rated DC:-30V
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:-3A
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:STT818
- Element Configuration:Single
- Power Dissipation:1.2W
- Transistor Application:SWITCHING
- Polarity/Channel Type:PNP
- Transistor Type:PNP
- Collector Emitter Voltage (VCEO):30V
- Max Collector Current:3A
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA 1V
- Current - Collector Cutoff (Max):100nA ICBO
- Vce Saturation (Max) @ Ib, Ic:500mV @ 20mA, 2A
- Max Breakdown Voltage:30V
- Collector Base Voltage (VCBO):30V
- Emitter Base Voltage (VEBO):5V
- Height:1.3mm
- Length:3.05mm
- Width:1.75mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 15000
- 1+: $0.70672
- 10+: $0.66672
- 100+: $0.62898
- 500+: $0.59338
- 1000+: $0.55979
小計金額 $0.70672











