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BC858CMTF
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-236-3, SC-59, SOT-23-3
- Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R
Date Sheet
在庫數 122556
- 1+: $0.02983
- 10+: $0.02814
- 100+: $0.02655
- 500+: $0.02505
- 1000+: $0.02363
小計金額 $0.02983
仕様 よくある質問
- Lifecycle Status:LIFETIME (Last Updated: 1 day ago)
- Factory Lead Time:17 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Number of Pins:3
- Weight:30mg
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:30V
- Collector-Emitter Saturation Voltage:-250mV
- Number of Elements:1
- hFEMin:110
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2004
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Voltage - Rated DC:-30V
- Max Power Dissipation:310mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Current Rating:-100mA
- Frequency:150MHz
- Base Part Number:BC858
- Element Configuration:Single
- Power Dissipation:310mW
- Transistor Application:SWITCHING
- Gain Bandwidth Product:150MHz
- Polarity/Channel Type:PNP
- Transistor Type:PNP
- Collector Emitter Voltage (VCEO):30V
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA 5V
- Current - Collector Cutoff (Max):15nA ICBO
- Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
- Transition Frequency:150MHz
- Max Breakdown Voltage:30V
- Collector Base Voltage (VCBO):-30V
- Emitter Base Voltage (VEBO):-5V
- Height:930μm
- Length:2.9mm
- Width:1.3mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 122556
- 1+: $0.02983
- 10+: $0.02814
- 100+: $0.02655
- 500+: $0.02505
- 1000+: $0.02363
小計金額 $0.02983
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