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BC858CMTF

在庫數 122556

  • 1+: $0.02983
  • 10+: $0.02814
  • 100+: $0.02655
  • 500+: $0.02505
  • 1000+: $0.02363

小計金額 $0.02983

仕様 よくある質問
  • Lifecycle Status:LIFETIME (Last Updated: 1 day ago)
  • Factory Lead Time:17 Weeks
  • Contact Plating:Tin
  • Mount:Surface Mount
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Number of Pins:3
  • Weight:30mg
  • Transistor Element Material:SILICON
  • Collector-Emitter Breakdown Voltage:30V
  • Collector-Emitter Saturation Voltage:-250mV
  • Number of Elements:1
  • hFEMin:110
  • Operating Temperature:150°C TJ
  • Packaging:Tape & Reel (TR)
  • Published:2004
  • JESD-609 Code:e3
  • Pbfree Code:yes
  • Part Status:Obsolete
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Voltage - Rated DC:-30V
  • Max Power Dissipation:310mW
  • Terminal Position:DUAL
  • Terminal Form:GULL WING
  • Current Rating:-100mA
  • Frequency:150MHz
  • Base Part Number:BC858
  • Element Configuration:Single
  • Power Dissipation:310mW
  • Transistor Application:SWITCHING
  • Gain Bandwidth Product:150MHz
  • Polarity/Channel Type:PNP
  • Transistor Type:PNP
  • Collector Emitter Voltage (VCEO):30V
  • Max Collector Current:100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA 5V
  • Current - Collector Cutoff (Max):15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Transition Frequency:150MHz
  • Max Breakdown Voltage:30V
  • Collector Base Voltage (VCBO):-30V
  • Emitter Base Voltage (VEBO):-5V
  • Height:930μm
  • Length:2.9mm
  • Width:1.3mm
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 122556

  • 1+: $0.02983
  • 10+: $0.02814
  • 100+: $0.02655
  • 500+: $0.02505
  • 1000+: $0.02363

小計金額 $0.02983

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