BC858BMTF

ON Semiconductor
Transistors - Bipolar (BJT) - Single
TO-236-3, SC-59, SOT-23-3
Bipolar Transistors - BJT SOT-23 PNP GP AMP
Date Sheet

在庫數 122556

1+： $0.06904
10+： $0.06514
100+： $0.06145
500+： $0.05797
1000+： $0.05469

小計金額 $0.06904

仕様よくある質問

Factory Lead Time：13 Weeks
Lifecycle Status：LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case：TO-236-3, SC-59, SOT-23-3
Mounting Type：Surface Mount
Mount：Surface Mount
Contact Plating：Tin
Number of Pins：3
Weight：30mg
Transistor Element Material：SILICON
hFEMin：110
Number of Elements：1
Collector-Emitter Saturation Voltage：-250mV
Collector-Emitter Breakdown Voltage：30V
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Published：2004
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Voltage - Rated DC：-30V
Max Power Dissipation：310mW
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：-100mA
Frequency：150MHz
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Base Part Number：BC858
Qualification Status：Not Qualified
Element Configuration：Single
Power Dissipation：310mW
Transistor Application：SWITCHING
Gain Bandwidth Product：150MHz
Polarity/Channel Type：PNP
Transistor Type：PNP
Collector Emitter Voltage (VCEO)：30V
Max Collector Current：100mA
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA 5V
Current - Collector Cutoff (Max)：15nA ICBO
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Transition Frequency：150MHz
Max Breakdown Voltage：30V
Collector Base Voltage (VCBO)：-30V
Emitter Base Voltage (VEBO)：-5V
Width：1.3mm
Length：2.9mm
Height：930μm
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 122556

1+： $0.06904
10+： $0.06514
100+： $0.06145
500+： $0.05797
1000+： $0.05469

小計金額 $0.06904

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BC858BMTF