BC640

ON Semiconductor
Transistors - Bipolar (BJT) - Single
TO-226-3, TO-92-3 (TO-226AA)
TRANS PNP 80V 0.5A TO-92
Date Sheet

在庫數 600

1+： $0.10105
10+： $0.09533
100+： $0.08993
500+： $0.08484
1000+： $0.08004

小計金額 $0.10105

仕様よくある質問

Lifecycle Status：OBSOLETE (Last Updated: 3 days ago)
Contact Plating：Tin
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Number of Pins：3
Weight：200.998119mg
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：80V
Collector-Emitter Saturation Voltage：-500mV
Frequency - Gain Bandwidth Product (GBP)：150MHz
Power Dissipation (Max)：625mW
Number of Elements：1
hFEMin：25
Operating Temperature：-55°C~150°C TJ
Packaging：Bulk
Published：2005
JESD-609 Code：e0
Pbfree Code：no
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Termination：Through Hole
ECCN Code：EAR99
Voltage - Rated DC：-80V
Terminal Position：BOTTOM
Peak Reflow Temperature (Cel)：240
Reach Compliance Code：not_compliant
Current Rating：-1A
Frequency：100MHz
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：BC640
Qualification Status：Not Qualified
Voltage：80V
Element Configuration：Single
Current：1A
Power Dissipation：1W
Power - Max：625mW
Polarity/Channel Type：PNP
Transistor Type：PNP
Collector Emitter Voltage (VCEO)：80V
Max Collector Current：500mA
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA 2V
Current - Collector Cutoff (Max)：100nA ICBO
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Transition Frequency：150MHz
Max Breakdown Voltage：80V
Collector Base Voltage (VCBO)：-80V
Emitter Base Voltage (VEBO)：5V
REACH SVHC：No SVHC
RoHS Status：Non-RoHS Compliant
Lead Free：Lead Free

在庫數 600

1+： $0.10105
10+： $0.09533
100+： $0.08993
500+： $0.08484
1000+： $0.08004

小計金額 $0.10105

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BC640