FDG6303N

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
6-TSSOP, SC-88, SOT-363
MOSFET 2N-CH 25V 0.5A SC70-6
Date Sheet

在庫數 36756

1+： $0.26089
10+： $0.24612
100+： $0.23219
500+： $0.21905
1000+： $0.20665

小計金額 $0.26089

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Number of Pins：6
Weight：28mg
Transistor Element Material：SILICON
Number of Elements：2
Turn Off Delay Time：17 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：1999
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：450mOhm
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：25V
Max Power Dissipation：300mW
Terminal Form：GULL WING
Current Rating：500mA
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：300mW
Turn On Delay Time：3 ns
FET Type：2 N-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：450m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：2.3nC @ 4.5V
Rise Time：8.5ns
Fall Time (Typ)：8.5 ns
Continuous Drain Current (ID)：500mA
Threshold Voltage：800mV
Gate to Source Voltage (Vgs)：8V
Drain Current-Max (Abs) (ID)：0.5A
Drain to Source Breakdown Voltage：25V
Dual Supply Voltage：25V
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
Nominal Vgs：800 mV
Height：1mm
Length：2mm
Width：1.25mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 36756

1+： $0.26089
10+： $0.24612
100+： $0.23219
500+： $0.21905
1000+： $0.20665

小計金額 $0.26089

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FDG6303N