FDG6321C

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
6-TSSOP, SC-88, SOT-363
Trans MOSFET N/P-CH 25V 0.5A/0.41A 6-Pin SC-70 T/R
Date Sheet

在庫數 650

1+： $0.62037
10+： $0.58525
100+： $0.55213
500+： $0.52087
1000+： $0.49139

小計金額 $0.62037

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Number of Pins：6
Weight：28mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：500mA 410mA
Number of Elements：2
Turn Off Delay Time：55 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2017
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
ECCN Code：EAR99
Resistance：450mOhm
Additional Feature：LOGIC LEVEL COMPATIBLE
Max Power Dissipation：300mW
Terminal Form：GULL WING
Current Rating：500mA
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：300mW
FET Type：N and P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：450m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：2.3nC @ 4.5V
Rise Time：8ns
Polarity/Channel Type：N-CHANNEL AND P-CHANNEL
Fall Time (Typ)：8 ns
Continuous Drain Current (ID)：500mA
Threshold Voltage：800mV
Gate to Source Voltage (Vgs)：8V
Drain Current-Max (Abs) (ID)：0.5A
Drain to Source Breakdown Voltage：25V
FET Technology：METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)：150°C
FET Feature：Logic Level Gate
Height：1.1mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 650

1+： $0.62037
10+： $0.58525
100+： $0.55213
500+： $0.52087
1000+： $0.49139

小計金額 $0.62037

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FDG6321C