FDC6301N

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
SOT-23-6 Thin, TSOT-23-6
ON SEMICONDUCTOR - FDC6301N - Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
Date Sheet

在庫數 500

1+： $0.72448
10+： $0.68347
100+： $0.64478
500+： $0.60829
1000+： $0.57385

小計金額 $0.72448

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Number of Pins：6
Weight：36mg
Transistor Element Material：SILICON
Number of Elements：2
Turn Off Delay Time：4 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：1997
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：4Ohm
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：25V
Max Power Dissipation：900mW
Terminal Form：GULL WING
Current Rating：220mA
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：900mW
Turn On Delay Time：5 ns
Power - Max：700mW
FET Type：2 N-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4 Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：0.7nC @ 4.5V
Rise Time：4.5ns
Fall Time (Typ)：4.5 ns
Continuous Drain Current (ID)：220mA
Threshold Voltage：850mV
Gate to Source Voltage (Vgs)：8V
Drain to Source Breakdown Voltage：25V
Dual Supply Voltage：25V
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
Nominal Vgs：850 mV
Height：1mm
Length：3mm
Width：1.7mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 500

1+： $0.72448
10+： $0.68347
100+： $0.64478
500+： $0.60829
1000+： $0.57385

小計金額 $0.72448

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FDC6301N